Efficient and stable near-infrared InAs quantum dot light-emitting diodes.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40069203.
- Also identified by DOI 10.1038/s41467-025-57746-1 and PMC identifier 11897344.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Visible quantum dot light-emitting diodes have satisfied commercial display requirements. However, near-infrared counterparts considerably lag behind due to the inferior quality of near-infrared quantum dots and limitations in device architecture suitable for near-infrared electroluminescence. Here, we present an efficient strategy using zinc fluoride to balance ZnSe shell growth across different core quantum dot facets, producing highly regular InAs/InP/ZnSe/ZnS quantum dots with near-unity quantum yield. Moreover, we develop a method of in-situ photo-crosslinking blended hole-transport materials for accurate energy level modulation. The crosslinked hole-transport layers enhance hole transfer to the emitting layer for balanced carrier dynamics in quantum dot light-emitting diodes. The resulting near-infrared quantum dot light-emitting diodes exhibit a peak external quantum efficiency of 20.5%, a maximum radiance of 581.4 W sr<sup>-1</sup> m<sup>-2</sup> and an operational half-lifetime of 550 h at 50 W sr<sup>-1</sup> m<sup>-2</sup>. This study represents a step towards practical application of near-infrared quantum dot light-emitting diodes.