Al<sub>0.68</sub>Sc<sub>0.32</sub>N/SiC-Based Metal-Ferroelectric-Semiconductor Capacitors Operating up to 1000 °C.
basic_science · Level V
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- Record sourced from PubMed, PMID 40094734.
- Also identified by DOI 10.1021/acs.nanolett.4c06178.
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Abstract
Ferroelectric (Fe) materials-based devices show great promise for nonvolatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al<sub>0.68</sub>Sc<sub>0.32</sub>N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature nonvolatile memory applications. Our 30 nm thick ferroelectric Al<sub>0.68</sub>Sc<sub>0.32</sub>N film grown on SiC exhibits stable and robust ferroelectric switching up to 1000 °C. The coercive field decreases linearly from -6.4/+11.9 MV cm<sup>-1</sup> at room temperature to -3.1/+7.8 MV cm<sup>-1</sup> at 800 °C, further reducing to -2.5 MV cm<sup>-1</sup> at 1000 °C. At 600 °C, the devices achieve remarkable reliability with ∼2000 endurance cycles and over at least 100 h of retention with negligible polarization loss. At 800 °C, the devices retain data for at least 10,000 s and exceed 400 write cycles. Our results further highlight the potential for ferroelectric AlScN thin films particularly when paired with SiC semiconductor substrates for high-temperature nonvolatile memory.