Comment on "Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide".
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- Record sourced from PubMed, PMID 40098495.
- Also identified by DOI 10.1021/acsnano.4c17977.
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Abstract
A three-terminal memtransistor utilizing monocrystalline molybdenum disulfide (MoS<sub>2</sub>) as the channel material and semimetal source/drain electrode has been reported by Yang et al. (<i>ACS Nano</i> <b>2024,</b> <i>18</i>, 6936-6945). The article attributes the memory characteristics to charge trapping and detrapping at the interface between the HfO<sub>2</sub> gate oxide and MoS<sub>2</sub>. Additionally, multiple memory states were achieved by applying different gate pulses, highlighting the device's high potential for neuromorphic computing applications. According to the article, these behaviors stem from space charge-limited current (SCLC) and trap-filled limit (TFL) mechanisms. However, our in-depth analysis of the reported current-voltage characteristics indicates that these models are somewhat insufficient and inappropriate. This work offers an alternative explanation for the observed results and proposes a more accurate working model with sound physical justifications. The different physical mechanisms derived from this study are expected to significantly impact the further development and improvement of the proposed memtransistors.