Discovery of a New Cu-Based Chalcogenide with High zT Near Room Temperature: Low-Cost Alternative for the Bi<sub>2</sub>Te<sub>3</sub>-Based Thermoelectrics.

Cherniushok, Oleksandr; Parashchuk, Taras; Snyder, G Jeffrey; Wojciechowski, Krzysztof T · Adv Mater · 2025

basic_science · Level V

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Abstract

Copper-based chalcogenides are cost-effective and environmentally friendly thermoelectric (TE) materials for waste heat recovery. Despite demonstrating excellent thermoelectric performance, binary Cu<sub>2</sub>X (X = S, Se, and Te) chalcogenides undergo superionic phase transitions above room temperature, leading to microstructural evolution and unstable properties. In this work, a new γ-phase of Cu<sub>6</sub>Te<sub>3-</sub> <sub>x</sub>S<sub>1+</sub> <sub>x</sub> (0 < x ≤ 1) is discovered, a narrow-bandgap semiconductor with outstanding thermoelectric performance and high stability. By substituting Te with S in metallic Cu<sub>6</sub>Te<sub>3</sub>S, the crystal symmetry is modified and structural phase transitions are eliminated. The γ-phase exhibits a significantly higher Seebeck coefficient of up to 200 µVK<sup>-1</sup> compared to 8.8 µVK<sup>-1</sup> for Cu<sub>6</sub>Te<sub>3</sub>S at room temperature due to optimized carrier concentration and increased effective mass. Cu<sub>6</sub>Te<sub>3-</sub> <sub>x</sub>S<sub>1+</sub> <sub>x</sub> materials also demonstrate ultralow thermal conductivity (≈0.25 Wm<sup>-1</sup>K<sup>-1</sup>), which, in concert with improved power factors, enables a high zT of ≈1.1 at a relatively low temperature of 500 K. Unlike most Cu-based chalcogenides, the γ-phase exhibits excellent transport property stability across multiple thermal cycles, making it a cost-effective and eco-friendly alternative to Bi<sub>2</sub>Te<sub>3</sub>-based materials. The developed Cu<sub>6</sub>Te<sub>3-</sub> <sub>x</sub>S<sub>1+</sub> <sub>x</sub> is a promising candidate for thermoelectric converters in waste heat recovery, and its potential can be further extended to cooling applications through carrier concentration tuning.