Localized Charge Doping in Carbon Nanotube Field-Effect Transistors via Metal Subnanocluster Absorption.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40163022.
- Also identified by DOI 10.1021/acs.nanolett.4c06261.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
A semiconducting carbon nanotube (CNT) has been considered as a promising channel material for high-performance field-effect transistors (FETs) in the post-Moore era. The significant ungated resistance in the gate extension region reduces the maximum current (<i>I</i><sub>max</sub>) and limits the scaling process of CNTFETs. Here, we systematically report charge-doping strategies by designing metal subnanocluster absorption onto CNTs. When density functional theory simulations were combined with experimental synthesis and measurements, it was found that Pd subnanoclusters are well-suited for p-type doping and Sc and Y are more effective for n-type doping in CNTFETs. The former maintains an average saturated <i>I</i><sub>max</sub> of 1410 μA/μm and an average peak transconductance (<i>g</i><sub>m</sub>) of 597 μS/μm in 200-nm-<i>L</i><sub>ch</sub> CNTFET. Our work demonstrated the availability of using metal subnanoclusters for polarity-controlled localized doping in the gate extension region for short-channel CNTFETs or similar low-dimensional semiconductors.