Solution-Processable Electronic-Grade 2D WTe<sub>2</sub> Enabled by Synergistic Dual Ammonium Intercalation.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40170574.
- Also identified by DOI 10.1021/acsnano.5c01224 and PMC identifier 12004911.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Tungsten ditelluride (WTe<sub>2</sub>) exhibits thickness-dependent properties, including magnetoresistance, ferroelectricity, and superconductivity, positioning it as an ideal candidate for nanoelectronics and spintronics. Therefore, the scalable synthesis of WTe<sub>2</sub> with defined thicknesses down to the monolayer limit is crucial for unlocking these properties. Here, we introduce a universal electrolyte chemistry utilizing dual-ammonium compounds to exfoliate WTe<sub>2</sub>, enabling precise control over the intercalation stages and flake thicknesses. This approach achieves an 86% exfoliation yield, producing high-quality flakes averaging 2.83 nm in thickness, in which approximately 10% are monolayers. A solution-processed, single-flake device (10 nm thick) exhibits a magnetoresistance (MR) of 50% at 2 K and 9 T, and piezo-response force microscopy (PFM) indicates ferroelectricity in WTe<sub>2</sub> flakes. Additionally, large-area WTe<sub>2</sub> thin films (15 × 15 mm<sup>2</sup>), fabricated using Langmuir-Schaefer deposition, exhibit metallic behavior with a high conductivity of 2.9 × 10<sup>4</sup> S/m. Overall, the hybrid electrolyte approach facilitates the scalable synthesis of high-quality, solution-processable, two-dimensional (2D) WTe<sub>2</sub> flakes with excellent properties. This versatility of the developed method has been further exemplified through the exfoliation of other transition metal dichalcogenides (e.g., MoS<sub>2</sub> and MoSe<sub>2</sub>), expanding the potential for the extensive application of exfoliated 2D materials in printable and flexible nanoelectronics.