Matrix plainification leads to high thermoelectric performance in plastic Cu<sub>2</sub>Se/SnSe composites.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40195306.
- Also identified by DOI 10.1038/s41467-025-58484-0 and PMC identifier 11977218.
- Licence recorded as CC BY-NC-ND.
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Abstract
Thermoelectric technology exhibits significant potential for power generation and electronic cooling. In this study, we report the achievement of exceptional thermoelectric performance and high plasticity in stable Cu<sub>2</sub>Se/SnSe composites. A novel matrix plainification strategy was employed to eliminate lattice vacancies within the Cu<sub>2</sub>Se matrix of the Cu<sub>2</sub>Se/SnSe composites, resulting in a marked improvement in carrier mobility and power factor. The presence of quasi-coherent interfaces induces phonon scattering, reducing lattice thermal conductivity without compromising carrier mobility. Consequently, a high figure of merit (ZT) of 3.3 was attained in the Cu<sub>2</sub>Se/5 wt.% Sn<sub>0.96</sub>Pb<sub>0.01</sub>Zn<sub>0.03</sub>Se composite. Additionally, the presence of high-density nanotwins imparts remarkable plasticity to the composite, yielding a compressive strain of 12%. The secondary phase contributes to the stability of the composite by hindering the extensive migration of Cu ions through bonding interactions. Our findings present a novel strategy for enhancing the thermoelectric performance of composite semiconductors, with potential applicability to other thermoelectric systems.