An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40223210.
- Also identified by DOI 10.1021/acs.nanolett.4c05855 and PMC identifier 12023033.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Efficient computing in cryogenic environments, including classical von Neumann, quantum, and neuromorphic systems, is poised to transform big data processing. The quest for high-density, energy-efficient memories continues, with cryogenic memory solutions still unclear. We present a Cryogenic Capacitorless Random Access Memory (C<sup>2</sup>RAM) cell using advanced Si technology, which enhances storage density through its scalability and multistate capability. Remarkably, the C<sup>2</sup>RAM maintains data for over a decade with its extended retention times and offers potential as an artificial synapse. This positions C<sup>2</sup>RAM as an ideal nonvolatile memory candidate for cryogenic computing applications and emerging quantum technologies.