Top-Gated P-MOSFET with CVD-Grown WSe<sub>2</sub> Channels via Self-Aligned WO<sub><i>x</i></sub> Conversion for Spacer Doping.
basic_science · Level V
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- Record sourced from PubMed, PMID 40232827.
- Also identified by DOI 10.1021/acs.nanolett.5c00813 and PMC identifier 12046599.
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Abstract
WO<sub><i>x</i></sub> conversion for doping is highlighted in recent advancements in WSe<sub>2</sub> p-FETs. While past studies focused on exfoliated WSe<sub>2</sub> flakes, our research examines CVD-grown WSe<sub>2</sub> films, assessing the impact of this doping on channel mobility and contact resistance in devices. Our approach enables effective threshold voltage tuning in both n- and p-type FETs with various low-dimensional material channels with the doping mechanism well captured by TCAD simulations. When applied to WSe<sub>2</sub>, trilayer devices exhibited a good and comparable median field-effect mobility of 65 cm<sup>2</sup>/V·s following the conversion process. Consequently, trilayer WSe<sub>2</sub> was used to demonstrate top-gated p-MOSFETs via self-aligned WO<sub><i>x</i></sub> conversion in the spacer region, achieving a 250-fold enhancement in the on-current while maintaining a subthreshold swing of 80 mV/dec. Our findings provide a comprehensive understanding of WO<sub><i>x</i></sub> conversion and its general applicability, paving the way for its use in future logic devices with low-dimensional materials.