Dual SOT Switching Modes in a Single Device Geometry for Neuromorphic Computing.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40245244.
- Also identified by DOI 10.1021/acs.nanolett.5c01100 and PMC identifier 12046592.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Neuromorphic computing aims to replicate the brain's efficient processing through artificial neurons and synapses, requiring binary and multilevel switching. We present a PtMn/(Co/Pd)<sub>4</sub>/Ta device that uniquely enables dual spin-orbit torque (SOT) switching modes─binary and multilevel (analog)─within the same geometry and stack structure, eliminating the need for device modifications. Binary SOT switching is achieved via domain wall nucleation and propagation at moderate current levels (∼65 mA), while multilevel switching occurs via domain nucleation mode without significant propagation after a high-current treatment (∼85 mA). The transition between two modes originates from structural changes after the current treatment. These modes allow for neuronal and synaptic functionalities, with the device achieving 96% accuracy in digit/letter recognition on the MNIST data set using an artificial neural network (ANN). The device's robust perpendicular magnetic anisotropy (PMA), dual-mode switching under a small in-plane field (<i>H</i><sub>X</sub>), and simplified fabrication underscore its promise as an energy-efficient solution for neuromorphic computing.