Faraday Lithography.

Abstract

As Moore's Law continues to push critical dimension (CD) scaling in integrated circuits, conventional photolithography approaches fundamental resolution limits. While alternative strategies such as self-aligned double patterning and directed self-assembly address these challenges, they introduce process complexity and manufacturing variability. Here we develop Faraday lithography (FL), a novel approach that hybridizes nanoscale 3D printing with conventional nanofabrication to overcome these limitations. FL achieves remarkable 35 nm features with atomic-scale precision (0.95 nm line edge roughness) and excellent local CD uniformity while maintaining process simplicity. The technique demonstrates unique capabilities for 2D/3D patterning across diverse substrates, whose conductivity or transparency has no influence. Unlike existing methods, FL accomplishes this without additional process steps or complex material requirements. This combination of high resolution, 3D capability, and material versatility positions FL as both a valuable complement to current patterning technologies and a potential catalyst for semiconductor nanomanufacturing innovation.