Tuning Kinetic Inductance with Doping in Superconducting Electron Gases at the KTaO<sub>3</sub> (111) Interface.
basic_science · Level V
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- Record sourced from PubMed, PMID 40294398.
- Also identified by DOI 10.1021/acs.nanolett.4c06029.
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Abstract
We used coplanar waveguide resonators fabricated from the two-dimensional superconductor formed at KTaO<sub>3</sub> (111) interfaces to characterize the superconductor's sheet kinetic inductance <i>L</i><sub>K/□</sub>. Upon varying the carrier density, in samples with <i>T</i><sub>c</sub> ranging from 0.62 to 1.81 K, we can tune <i>L</i><sub>K/□</sub> between 1.88 and 7.42 nH/□ at the lowest temperatures, exceeding the highest values reported for granular aluminum films. The temperature dependence of <i>L</i><sub>K/□</sub> is consistent with a superconducting gap without nodes. The high <i>L</i><sub>K/□</sub> of superconducting KTaO<sub>3</sub> (111) interfacial electron gases combined with the high dielectric constant of KTaO<sub>3</sub> results in resonators with exceedingly low phase velocities ("slow light") and small mode volumes. In addition, superconducting KTaO<sub>3</sub> (111) interfacial electron gases are robust in magnetic fields well above a Tesla. These features can enable unique device applications in superconducting electronics and quantum information science.