Strong Anisotropic Magnetotransport in One-Dimensional Bi<sub>2</sub>O<sub>2</sub>Te Kondo System via Intercalated Oxidation.
basic_science · Level V
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- Record sourced from PubMed, PMID 40331474.
- Also identified by DOI 10.1021/acs.nanolett.5c01536.
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Abstract
Fundamental principles and material realization of electronic state regulation are attracting multidisciplinary interest, where phase engineering and structural modification offer promising strategies for identifying suitable material systems. Herein, Bi<sub>2</sub>O<sub>2</sub>Te nanowires epitaxially grown along unconventional (013) planes, with randomly intercalated oxidation of (Te)<sup>2-</sup> layers, are constructed featuring localized magnetic moments. Anomalous non-Ohmic magnetotransport manifesting universal conductance fluctuation reveals the characteristics of a disordered electronic system. Negative magnetoresistance emerges under arbitrary magnetic field orientations, with Kondo scattering indicated as the dominant mechanism. As in-plane transport of Bi<sub>2</sub>O<sub>2</sub>Te yields positive magnetoresistance sensitive to the perpendicular field component, a three-dimensional tunable magnetotransport including positive/negative magnetoresistance and an intermediate state is achieved by adjusting the competition between the two mechanisms. These results position Bi<sub>2</sub>O<sub>2</sub>Te as a potential platform for studying the regulation of electronic states and elucidating the microscopic origin of negative magnetoresistance in nonmagnetic disordered systems.