Subangstrom ion beam engineering of buried ultrathin oxides for scalable quantum computing.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40333973.
- Also identified by DOI 10.1126/sciadv.ads9744 and PMC identifier 12057654.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Multilayer nanoscale systems incorporating ultrathin tunnel barriers, magnetic materials, amorphous oxides, and promising dielectrics are essential for next-generation logics, memory, quantum, and neuro-inspired computing. Still, an ultrathin film control at the atomic scale remains challenging. Here, we introduce a complementary metal-oxide semiconductor-compatible approach using focused ion beam irradiation for buried ultrathin films' engineering with subangstrom thickness control. Molecular dynamics simulations confirm the pivotal role of ion-induced crystal defects. Its performance is exemplified by Josephson junction resistance tuning in the range of 2 to 37% with a 0.86% standard deviation in completed chips. Furthermore, it enables ±17-megahertz frequency accuracy (±0.172 angstrom tunnel barrier thickness variation) in superconducting multiqubit processors, as well as qubit energy relaxation and echo coherence times exceeding 0.5 milliseconds.