Highly efficient light-emitting diodes via self-assembled InP quantum dots.
basic_science · Level V
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- Record sourced from PubMed, PMID 40335467.
- Also identified by DOI 10.1038/s41467-025-59527-2 and PMC identifier 12059007.
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Abstract
Heavy-metal-free quantum dot light-emitting diodes (QLEDs) face commercialization challenges due to low efficiency and poor stability. Spin-coated quantum dot films often create charge leakage areas, limiting device performance. Here, we develop an evaporative-driven self-assembly strategy that enables the preparation of uniform and dense InP-based quantum dot films. During device operation, these films effectively suppress performance degradation caused by charge leakage. QLEDs with uniform and dense InP-based quantum dot films achieve high external quantum efficiency (26.6%) and luminance (1.4 × 10<sup>5 </sup>cd m<sup>-2</sup>), along with considerable stability (extrapolated T<sub>50</sub> lifetime of 4026 hours at 1000 cd m<sup>-2</sup>). For a 2 × 3 cm<sup>2</sup> InP-based device, the peak external quantum efficiency reaches 21.1%. By combining high-performance QLEDs with lithography technology, we fabricate miniaturized QLEDs with a minimum pixel size of 3 μm, achieving a resolution as high as 5080 pixels per inch and a peak external quantum efficiency of 22.6%.