Hidden structural phase transition assisted ferroelectric domain orientation engineering in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films.
basic_science · Level V
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- Record sourced from PubMed, PMID 40335512.
- Also identified by DOI 10.1038/s41467-025-59519-2 and PMC identifier 12059023.
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Abstract
The polarization of HfO<sub>2</sub>-based ferroelectrics originates from the metastable orthorhombic phase formed during the tetragonal to monoclinic phase transition and is typically controlled by tuning the phase content. However, another way to control polarization via modulating ferroelectric domain orientations remains underexplored. This work uncovers a hidden tetragonal-orthorhombic phase transition pathway to engineer domain orientations and further polarization in polycrystalline Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> using single-crystalline TiN substrates. Specifically, (001)<sub>O</sub> and/or (010)<sub>O</sub> domains, which fully contribute to remanent polarization under an electric field, are controllable in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> on TiN (001) and (111), enhancing remanent polarization compared to that on TiN (110). The key is the hidden transition from the tetragonal phase's longest c-axis to the orthorhombic phase's shorter b<sub>O</sub>/c<sub>O</sub>-axis, alongside the reported one to the longest a<sub>O</sub>-axis, assisted by periodic dislocations at the TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> interface. These findings shed light on governing the polarization of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films by controlling the interface dislocations and further domain orientations.