Semiconductor Performance Optimization on Quasi-Two-Dimensional Bi<sub>2</sub>O<sub>2</sub>(S<sub><i>x</i></sub>Se<sub>1-<i>x</i></sub>) through Monotonous Alloying.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40344033.
- Also identified by DOI 10.1021/acs.nanolett.5c01164 and PMC identifier 12100717.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Bismuth oxychalcogenides (Bi<sub>2</sub>O<sub>2</sub>X, where X = S, Se, Te) have garnered significant attention recently due to their high electron mobility, air stability, and excellent photoelectric properties. Therefore, precise control and optimization over the properties of these novel quasi-2D materials are crucial for practical applications. In this study, we synthesize epitaxial films of Bi<sub>2</sub>O<sub>2</sub>(S,Se) by the monotonous alloying of sulfur (S) and selenium (Se). Our findings reveal that the lattice constants, band gaps, and electrical properties of the films vary according to the elemental composition. Further, we observed an enhanced field-effect mobility of ∼215 cm<sup>2</sup>/(V s) and an on/off ratio of ∼10<sup>6</sup> in the Bi<sub>2</sub>O<sub>2</sub>(S<sub>0.4</sub>Se<sub>0.6</sub>) heterostructures with a Bi<sub>2</sub>SeO<sub>5</sub> (BSO) oxide layer. With these efforts, this work establishes a pathway toward developing novel designs for 2D Bi<sub>2</sub>O<sub>2</sub>X materials.