A plasmon-electron addressable and CMOS compatible random access memory.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40344057.
- Also identified by DOI 10.1126/sciadv.adr1172 and PMC identifier 12063659.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The rapid increase in data generation and storage poses substantial challenges, necessitating a transition from traditional charge-based devices to high-speed optical alternatives for computational tasks. Photon-assisted or plasmon-assisted memory devices emerge as promising solutions for facilitating faster read/write operations. By using surface plasmon polaritons for writing operations, we can dynamically read memory states through the measurement of tunneling currents in thin layers of HfO<sub>2</sub> ferroelectric materials sandwiched between Au thin film electrodes. Our plasmon-addressable memory platform offers versatile functionality in both nanoelectronic and nanoplasmonic systems, demonstrating a robust hybrid architecture with transformative potential for computing and data processing applications.