Moiré ferroelectricity modulates light emission from a semiconductor monolayer.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40344065.
- Also identified by DOI 10.1126/sciadv.adt7789 and PMC identifier 12063658.
- Licence recorded as CC BY-NC.
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Abstract
Semiconductor moiré superlattices, characterized by their periodic spatial light emission, unveil a new paradigm of engineered photonic materials. Here, we show that ferroelectric moiré domains formed in a twisted hexagonal boron nitride (t-hBN) substrate can modulate light emission from an adjacent semiconductor MoSe<sub>2</sub> monolayer. The electrostatic potential at the surface of the t-hBN substrate provides a simple way to confine excitons in the MoSe<sub>2</sub> monolayer. The excitons confined within the domains and at the domain walls are spectrally separated because of a pronounced Stark shift. Moreover, the patterned light emission can be dynamically controlled by electrically gating the ferroelectric domains, introducing a functionality beyond other semiconductor moiré superlattices. Our findings chart an exciting pathway for integrating nanometer-scale moiré ferroelectric domains with various optically active functional layers, paving the way for advanced nanophotonics and metasurfaces.