Oxygen Vacancy Induced 2D Bi<sub>2</sub>SeO<sub>5</sub> Non-Volatile Memristor for 1T1R Integration.
basic_science · Level V
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- Record sourced from PubMed, PMID 40353299.
- Also identified by DOI 10.1021/acs.nanolett.5c01345.
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Abstract
Two-dimensional (2D) layered Bi<sub>2</sub>SeO<sub>5</sub>, a novel high-k oxide material, has shown considerable potential for enhancing memristor performance. In this study, high-crystallinity 2D Bi<sub>2</sub>SeO<sub>5</sub> nanosheets were successfully exfoliated, demonstrating that oxygen-vacancy-induced Bi<sub>2</sub>SeO<sub>5</sub> memristors exhibit superior nonvolatile characteristics. Specifically, these memristors exhibit an ultrahigh on/off ratio (up to 10<sup>10</sup>), an extremely low off-state current (10<sup>-12</sup> A), and rapid switching speeds (160 ns for SET and 110 ns for RESET). Moreover, the memristor demonstrates excellent retention and endurance capabilities. Additionally, by integrating SnS<sub>2</sub> transistors, a 1T1R (one transistor and one resistor) structure was constructed, which simplifies circuit design and enables AND gate logic and multivalue logic storage functions. This work establishes a solid foundation for the practical application of 2D high-performance oxide memristors in future high-density-integration and fast in-memory computing systems.