Heterovalent-Doped Sb<sub>2</sub>S<sub>3</sub> Glass for Large-Area Sensitive X-ray Detection and Imaging.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40361264.
- Also identified by DOI 10.1021/acs.nanolett.5c01304.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Flat-panel X-ray detectors are indispensable in a variety of imaging applications ranging from medical radiography to industrial inspections. Current commercial detectors (α-Se/CdTe) suffer from unsatisfactory image contrast and high-dose X-ray exposure owing to the limited attenuation and charge collection. Here, we show that heterovalent-doped Sb<sub>2</sub>S<sub>3</sub> glass (α-Sb<sub>2</sub>S<sub>3</sub>) can effectively convert X-ray photons to electrical current signals. SnI<sub>2</sub> doping modifies the Sb-S network and stabilizes the noncrystalline structure, enabling bulk α-Sb<sub>2</sub>S<sub>3</sub> with a narrow bandgap (1.66 eV), large mobility-lifetime product (5.6 × 10<sup>-5</sup> cm<sup>2</sup> V<sup>-1</sup>), and strong radiation attenuation capacity simultaneously. The α-Sb<sub>2</sub>S<sub>3</sub>-based detector exhibits a high sensitivity of 4397 μC Gy<sup>1-</sup> cm<sup>-2</sup>, a low detection limit of 66 nGy s<sup>-1</sup>, and excellent stability. Thermally evaporated α-Sb<sub>2</sub>S<sub>3</sub> on a pixelated thin film transistor (TFT) backplane enables high-resolution X-ray imaging. This is the first demonstration of Sb<sub>2</sub>S<sub>3</sub>-based X-ray detection and imaging, creating new possibilities for the development of amorphous semiconducting materials and devices.