Giant Nonvolatile Multistate Resistance with Fully Magnetically Controlled van der Waals Multiferroic Tunnel Junctions.
basic_science · Level V
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- Record sourced from PubMed, PMID 40372062.
- Also identified by DOI 10.1021/acs.nanolett.5c00440.
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Abstract
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here, we propose fully magnetically controlled vdW-MFTJs based on a CrBr<sub>3</sub>/MnPSe<sub>3</sub>/CrBr<sub>3</sub> vertical heterostructure, achieving ferroelectric polarization reversal without atomic migration. First-principles calculations reveal that integrating PtTe<sub>2</sub>/alkali-metal (Li/Na/K)-doped/intercalated CrBr<sub>3</sub> electrodes enables exceptional performance, with a maximum tunneling magnetoresistance (TMR) of 8.1 × 10<sup>5</sup>% and tunneling electroresistance (TER) of 2499%. Applying an external bias voltage enhances the TMR to 3.6 × 10<sup>7</sup>% and the TER to 9990%. A pronounced negative differential resistance (NDR) effect is observed with a record peak-to-valley ratio (PVR) of 9.55 × 10<sup>9</sup>% for vertical tunnel junctions. The spin-filtering channels are flexibly controlled by the magnetization direction of the magnetic free layer, achieving perfect spin-filtering over a broad bias range. This work paves the way for the experimental exploration of fully magnetically controlled vdW-MFTJs.