Coulomb Blockade and Possible Luttinger Liquid Behaviors in Encapsulated High-Mobility Graphene Nanoribbons.
basic_science · Level V
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- Record sourced from PubMed, PMID 40394459.
- Also identified by DOI 10.1021/acs.nanolett.4c06064.
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Abstract
Graphene nanoribbons (GNRs) are highly promising for exploring one-dimensional (1D) correlation physics and constructing digital logic circuits. Here, we report the intrinsic electrical transport behaviors of GNR field-effect transistors (FETs) fabricated using GNRs <i>in situ</i> encapsulated by hexagonal boron nitride (hBN) flakes. The FET devices exhibit excellent performance at room temperature: mobility up to ∼5000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, on/off ratio up to ∼10<sup>6</sup>, and subthreshold swing down to ∼70 mV dec<sup>-1</sup>. The devices exhibit periodic conductance peaks and regular Coulomb diamonds due to strong electron-electron repulsion at cryogenic temperatures. Additionally, conductance of the GNR devices exhibits power-law dependence and universal scaling, signatures of Luttinger liquid behaviors, with a tunable Luttinger parameter <i>g</i> ranging from 0.1 to 0.3. Our study demonstrates that the <i>in situ</i> encapsulated GNRs can function as both high-performance FET devices and strongly interacting 1D quantum systems, providing an ideal platform for studying 1D transport and correlated physics.