Electrical Detection of Single-Domain Néel Vector Reorientation across the Spin-Flop Transition in Cr<sub>2</sub>O<sub>3</sub> Crystals.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40455859.
- Also identified by DOI 10.1021/acs.nanolett.5c02181 and PMC identifier 12186625.
- Licence recorded as CC BY-NC-ND.
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Abstract
Electrical transport measurements in heterostructures of antiferromagnetic Cr<sub>2</sub>O<sub>3</sub> bulk crystals and a thin Pt layer exhibit sharp responses as the Néel vector of Cr<sub>2</sub>O<sub>3</sub> undergoes the spin-flop transition. This abrupt change can arise from several distinct mechanisms including magnetostriction, proximity-induced anomalous Hall, spin Hall anomalous Hall, and spin Hall planar Hall effects. While large Pt devices sensing multiple up/down domains can produce indistinguishable Hall signal jumps due to different initial Néel vector orientations, smaller Pt devices that sense single domains isolate the proximity-induced Hall signals. This allows direct electrical detection of Néel vector reorientation across the spin-flop transition in single-domain regions. Furthermore, the single-domain state can be prepared by magnetic field cooling or magnetoelectric cooling. We demonstrate a method to control and characterize the three-dimensional orientation of single-domain Néel vectors by exploiting Hall measurements and cooling techniques, crucial for future antiferromagnetic spintronic applications.