Quasi-Homojunction Based on 1D-Chained Alloyed Sb<sub>2</sub>Se<sub>3</sub> for High-Performance Broadband Photodetection and Matrix Imaging.
basic_science · Level V
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- Record sourced from PubMed, PMID 40467472.
- Also identified by DOI 10.1021/acs.nanolett.5c01232.
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Abstract
Junction-based photodiodes play a crucial role in integrated devices due to their compactness and efficient rectification. However, three-dimensional (3D) semiconductor heterojunctions suffer from high interface defects caused by lattice mismatch, while one-dimensional (1D) semiconductors feature large interchain gaps that alleviate lattice matching requirements and provide high strain relaxation, making them highly promising for homojunction construction. Herein, a quasi-homojunction is constructed via in situ Bi doping in 1D Sb<sub>2</sub>Se<sub>3</sub>. Compared to uniform film photodetectors, the quasi-homojunction-based photodetector exhibits a low dark current (4.8 nA cm<sup>-2</sup>), high light current (62.2 μA cm<sup>-2</sup>), high external quantum efficiency (35.5%@2.73 nW cm<sup>-2</sup>), and fast response speed. Furthermore, the photodetector is monolithically integrated on the thin-film transistor readout circuit for short-wavelength infrared imaging applications, demonstrated in a 64 × 64 pixel array. Moreover, the detectors exhibit a broadband detection from X-ray to near-infrared, showing potential application for image fusion. This work provides a novel strategy for broadband photodetectors and integration.