Adaptive Epitaxy of C-Si-Ge-Sn: Customizable Bulk and Quantum Structures.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40500993.
- Also identified by DOI 10.1002/adma.202506919 and PMC identifier 12447049.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The successful demonstration of (Si)Ge<sub>1-x</sub>Sn<sub>x</sub> alloys as direct-gap materials for infrared lasers has driven intense research on group IV-based devices for nanoelectronics, energy harvesting, and quantum computing applications. The material palette of direct-gap group-IV alloys can be further extended by introducing carbon to fine-tune their structural and electronic properties, significantly expanding their functionality. This work presents heteroepitaxial growth of C(Si)GeSn alloys using an industry-standard reduced-pressure chemical vapor deposition reactor. The introduction of CBr<sub>4</sub> as a precursor enables controlled incorporation of C atoms (<1 at.%) into the epilayer lattice, while simultaneously increasing the Sn content in the CGeSn alloy up to ≈18 at.%. Carbon plays a key role in modulating strain, stabilizing the crystal structure, and influencing material properties. By leveraging alloying and strain engineering, quaternary CSiGeSn bulk layers and CGeSn/GeSn heterostructures are epitaxially grown. The impact of C incorporation on optical emission is investigated in LEDs based on CGeSn/GeSn multiple quantum wells, demonstrating enhanced near-infrared emission at 2.54 µm, which is sustained up to room temperature.