Rationally Designed Versatile Heterostructures Consisted of Two-Dimensional Goldene and MXene Sc<sub>2</sub>CF<sub>2</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 40531925.
- Also identified by DOI 10.1021/acs.nanolett.5c02560.
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Abstract
The rational design of two-dimensional (2D) metal-semiconductor (M-S) heterostructures through contact engineering is crucial for the development of next-generation nanoelectronic devices. In this Letter, van der Waals design strategies were employed to explore the contact characteristics between goldene and MXene Sc<sub>2</sub>CF<sub>2</sub>. Our findings reveal that n-type Schottky contacts are formed across all goldene/Sc<sub>2</sub>CF<sub>2</sub> heterostructures. Notably, this heterostructure exhibits reversible switching between n- and p-type Schottky contacts and can be tuned from Schottky to ohmic contacts via electric gating and vertical strain. Furthermore, goldene/Sc<sub>2</sub>CF<sub>2</sub> exhibits a low tunneling specific resistivity of 2.80 × 10<sup>-10</sup> Ω cm<sup>2</sup>, indicating its excellent charge injection efficiency. These findings offer valuable theoretical guidance for the design and optimization of goldene-based devices, such as field-effect transistors (FETs) and photodetectors.