Electric-Field-Tunable Spin-Orbit Gap in a Bilayer Graphene/WSe<sub>2</sub> Quantum Dot.
basic_science · Level V
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- Record sourced from PubMed, PMID 40534244.
- Also identified by DOI 10.1021/acs.nanolett.5c02229.
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Abstract
We report on the investigation of proximity-induced spin-orbit coupling (SOC) in a heterostructure of bilayer graphene (BLG) and tungsten diselenide (WSe<sub>2</sub>). A BLG quantum dot (QD) in the few-particle regime acts as a sensitive probe for induced SOC. Finite bias and magnetotransport spectroscopy measurements reveal a significantly enhanced SOC that decreases with the applied displacement field, distinguishing it from pristine BLG. Furthermore, our measurements demonstrate a reduced valley <i>g</i> factor at larger displacement fields, consistent with weaker lateral confinement of the QD. Our findings show evidence of the influence of WSe<sub>2</sub> across BLG layers, driven by reduced real-space confinement and increased layer localization of the QD states on the BLG layer distant to the WSe<sub>2</sub> at higher displacement fields. This study demonstrates the electrostatic tunability of the spin-orbit gap in BLG/WSe<sub>2</sub> heterostructures, which is especially relevant for the field of spintronics and future spin qubit control in BLG QDs.