Near-Infrared Electroluminescence from Ambipolar Transistors Built on sp<sup>3</sup>-Functionalized Carbon-Nanotube Networks.
basic_science · Level V
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- Record sourced from PubMed, PMID 40539841.
- Also identified by DOI 10.1021/acsnano.5c04322.
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Abstract
We demonstrate room-temperature, near-infrared electroluminescence (EL) from networks of sp<sup>3</sup>-functionalized (6,5) single-walled carbon nanotubes (SWCNTs) using ambipolar transistors with sub-10 μm channels. EL efficiency dependences on drain current and channel length are investigated, giving insights into the carrier recombination in SWCNT networks. EL from free and localized excitons are strongly limited by trap-assisted Shockley-Read-Hall (SRH) recombination; high emission efficiency can be achieved in short channels down to 2 μm with the alleviation of SRH recombination. A substantial drop in efficiency is observed in the 1 μm channel, signifying the onset of incomplete carrier recombination. Moreover, electroluminescence from localized trions (∼1405 nm) is observed for the first time with additional emission peaks from free excitons (∼1009 nm), free trions (∼1170 nm), and localized excitons (∼1264 nm). The trion and localized trion-emissions are interdependent to each other, confirming that the localized trion is formed through a free trion captured by a sp<sup>3</sup> defect.