Gate-Tunable Band Edge in Few-Layer MoS<sub>2</sub>.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40544362.
- Also identified by DOI 10.1021/acs.nanolett.5c01998 and PMC identifier 12232393.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the <i>K</i> points, whereas in multilayers, they shift to the <i>Q</i> points, midway between the Γ and <i>K</i> points. In this study, we conduct magnetotransport experiments to measure the occupation in the <i>Q</i> and <i>K</i> valleys in four-layer molybdenum disulfide (MoS<sub>2</sub>). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid <i>k</i>·<i>p</i> tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS<sub>2</sub>, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs.