Site-Selective Generation of Sub-Band Gap Infrared Light Emission by Local Strain in van der Waals γ-InSe.
basic_science · Level V
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- Record sourced from PubMed, PMID 40549852.
- Also identified by DOI 10.1021/acsnano.5c05053.
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Abstract
van der Waals layered materials have garnered enormous attention for their unique electronic and optical properties. Among them, γ-indium selenide (γ-InSe) exhibits a thickness-dependent crossover from a direct to an indirect band gap. Here, we report strain-induced sub-band gap infrared photoluminescence (PL) in γ-InSe by applying local strain via SiO<sub>2</sub> nanopillars. The broad sub-band gap emission is confined to the strained sites and vanishes above 200 K. Density functional theory calculations, combined with laser power-dependent PL and time-resolved PL measurements, suggest the defect origin of the emission caused by selenium vacancies. These findings elucidate strain-defect interactions in layered γ-InSe and indicate a pathway to defect-based optoelectronics and quantum-emitter devices.