Micrometer-scale-thick quantum-dot LEDs with notably enhanced stability and ultrahigh brightness.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40577450.
- Also identified by DOI 10.1126/sciadv.ads7770 and PMC identifier 12204118.
- Licence recorded as CC BY-NC.
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Abstract
The thickness of quantum-dot light-emitting diodes (QLEDs) is typically limited to around 100 nm, which could lead to the formation of short-circuit paths that ultimately reduce the device performance. Here, we develop micrometer-scale-thick QLEDs by using extremely conductive ZnMgO as an electron transport layer. With a H<sub>2</sub>O-regulated doping method, the electron concentration of the ZnMgO film is greatly increased, which results not only in the ohmic injection but also in the trap-free electron transport. As a result, micrometer-scale-thick QLEDs, with thickness of more than 10 times that of standard QLEDs, are achieved. The demonstrated micrometer-thick red QLEDs not only can be directly built on various substrates such as Cu slabs, Ag nanowire-coated substrate, Al foils, and printing papers but also can exhibit a notably enhanced <i>T</i><sub>90</sub> life span over 11,000 hours at 1000 candelas per square meter and an ultrahigh brightness of 3,941,000 candelas per square meter, which represent 5.03- and 4.36-fold improvements over those of conventional QLEDs.