Mn-atomic-layered antiphase boundary enhanced ferroelectricity in KNN-based lead-free films.
basic_science · Level V
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- Record sourced from PubMed, PMID 40595764.
- Also identified by DOI 10.1038/s41467-025-61170-w and PMC identifier 12215337.
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Abstract
One preferred lead-free ferroelectric, (K,Na)NbO<sub>3</sub>, offers prominent features of environmentally benign and excellent piezoelectricity, but suffers from poor ferroelectricity. Mn-doping has improved its electrical properties, yet its site occupancy remained unclear. In this study, Mn-atomic-layered antiphase boundaries were created in (K,Na)NbO<sub>3</sub>-based films, revealing Mn occupying the A-site position. These boundaries stabilized ferroelectricity in these (K,Na)NbO<sub>3</sub>-based films with a large twice remnant polarization (~72.5 μC/cm<sup>2</sup>) across a wide frequency range (20 Hz-10 kHz). High-resolution imaging shows densely arranged antiphase boundaries are grown along three crystal axes. These boundaries are Mn-atomic-enriched at a nanoscale width of a single unit cell, equilibrating the interfacial charges and clamp the interfacial strain, resulting in the highly squared hysteresis loops and high Curie temperature of ~400 °C in the films. Our results may provide a paradigm for designing high-performance lead-free ferroelectric films, unleashing their application potential for expelling lead-containing counterparts.