Momentum-dependent field-effect transistor.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40614198.
- Also identified by DOI 10.1126/sciadv.adv4742 and PMC identifier 12227061.
- Licence recorded as CC BY-NC.
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Abstract
The silicon-based field-effect transistor (FET) is approaching the physical limits for the prominent short-channel effects and the sequent leakage currents under the conventional paradigm. Here, we propose a momentum-dependent field-effect transistor (MD-FET) to address this issue, in which a monolayer 2D semiconductor is sandwiched by two cross 1D carbon nanotube electrodes. The MD-FET enables a perfect off state, as the elastic tunneling is forbidden by the momentum mismatch between the cross 1D contacts. It can also access a substantial on state, because the momentum mismatch can be compensated by the electron-phonon scattering in a 2D channel. The MD-FET with sub-1-nm channel thus exhibits high on/off ratios of ~10<sup>7</sup>, which breaks through the theoretical limit on the short-channel effect. The MD-FET opens up a previously unknown paradigm to further scale down transistors beyond silicon and inspires a promising solution for the post-Moore era.