PZT optical memristors.
basic_science · Level V
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- Record sourced from PubMed, PMID 40634334.
- Also identified by DOI 10.1038/s41467-025-61536-0 and PMC identifier 12241311.
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Abstract
Optical memristors represent a monumental leap in the fusion of photonics and electronics for neuromorphic computing and artificial intelligence. Here, we reveal the first lead zirconate titanate (PZT) optical memristor, working with a paradigm of functional duality: non-volatile setting and ultrafast volatile modulation via the Pockels effect. Fine-tuning and large modulation depth are achieved with an index change of 4.6 × 10<sup>-3</sup> when setting above a threshold voltage V<sub>th</sub> and the switching energy is 12.3 pJ only. The non-volatility is highly stable even with >100,000 cycles. Sub-nanosecond volatile modulation (48 Gbps, 432 fJ/bit) is realized with high efficiency (V<sub>π</sub>L ~ 0.5 V·cm) via the strong Pockels effect below V<sub>th</sub>. Our wafer-scale manufacturing process shows great potential for mass production. The present PZT optical memristors bridge the gap between high-speed photonics and non-volatile memory, offering transformative potential for high-speed and energy-efficient optical interconnects, quantum computing, neural networks, in-memory computing, and brain-like architecture.