Current Crowding in a High-Efficiency Black Phosphorus Light-Emitting Diode Using a Reflective Back Contact.
basic_science · Level V
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- Record sourced from PubMed, PMID 40679117.
- Also identified by DOI 10.1021/acs.nanolett.5c01829.
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Abstract
We demonstrate a high-performance mid-infrared (MIR) light-emitting diode (LED) based on a black phosphorus (b-P)/n-MoS<sub>2</sub> heterojunction. A gold back contact combined with a rhenium-doped n-type MoS<sub>2</sub> layer is used to enhance light extraction. The device shows a MIR peak external quantum efficiency (EQE) of (1.6 ± 0.2)% at room temperature and a record (7.0 ± 0.5)% EQE at 77 K, with a maximum radiant power density of (108 ± 8) W/cm<sup>2</sup>. Finite-element simulations highlight the importance of phonon-assisted band-to-band tunneling under reverse bias and the influence of carrier velocity saturation under forward bias. The simulations also reveal that the high ideality factors extracted from the current-voltage characteristic are due to current crowding at the heterojunction and a consequence of the device geometry. These findings establish a new high-performance b-P LED architecture and provide crucial insights into the physics of MIR sources based on 2D materials.