High-Resolution Nanoscale AC Quantum Sensing in CMOS Compatible SiC.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40693560.
- Also identified by DOI 10.1021/acs.nanolett.5c02515 and PMC identifier 12314907.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
High-resolution nanoscale nuclear magnetic resonance (NMR) allows measurement of chemical structure at the single-molecule level for determining molecular dynamics. Until now, nitrogen vacancy centers in diamond have been the only platform to demonstrate single-defect NMR sensing at sub-Hz spectral resolution. Using a single silicon vacancy defect prepared under CMOS-compatible conditions in commercial 4H-silicon carbide at room temperature, we use the Synchronized Readout technique to measure a test signal. We achieve a spectral resolution of 0.33 Hz, necessary for understanding molecular structure, and estimate a magnetic sensitivity of 358 μT/<math xmlns="http://www.w3.org/1998/Math/MathML"><msqrt><mrow><mi>H</mi><mi>z</mi></mrow></msqrt></math> for our system. We also explore the necessary improvements for achieving single-proton spin sensitivity. Combining these results with future integrated photonics shows a promising path toward scalable nanoscale sensing for low-cost NMR spectrometers based on an industry-mature silicon carbide material.