Field-Programmable Bimodal Switching in a Hybrid-Dual-Gated MoS<sub>2</sub> Transistor.
basic_science · Level V
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- Record sourced from PubMed, PMID 40698776.
- Also identified by DOI 10.1021/acs.nanolett.5c02790.
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Abstract
The ultrahigh surface-to-volume ratio and expandable interlayer spacing of van der Waals solids allow their channel bodies to strongly and dynamically interact with foreign molecules. However, controlling such multiple molecular interactions within a single, integrated platform has remained a technical challenge. Herein, we introduce a so-called hybrid-dual-gated voltage-controlled bimodal switch demonstrated on a single MoS<sub>2</sub> transistor by cointegrating high-<i>k</i> solid and ionic liquid electrolytes as dual-gate dielectrics. Upon applying the synchronized dual-gate voltages, it results in two distinctive yet interchangeable switching modes: electrostatic near-Boltzmann-limit switching and intercalation-driven metal-insulator transitions. In addition to the improved field-effect switching performances (<i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ∼ 10<sup>9</sup>, SS<sub>min</sub> ∼ 61 mV/dec) in the low-gate voltage (<i>V</i><sub>G</sub>) regime, the steep-slope metal-insulator transitions accompanying 2H-to-1T structural alternations can also be achieved in the high-<i>V</i><sub>G</sub> regime. By incorporating conformal electrode passivation and independent dual-gating modulation, the proposed device platform enables highly stable, field-tunable bimodal switching behaviors through broad-range host-guest interactions.