Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40700506.
- Also identified by DOI 10.1126/sciadv.adw5005 and PMC identifier 12285718.
- Licence recorded as CC BY-NC.
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Abstract
Expanding the diversity of substrate materials for the growth of single-crystalline films enables the heterointegration of electronic and optoelectronic devices in modern semiconductor industry. However, the substrate materials are restricted to those having matched single-crystalline lattices with the epilayers, thereby making the use of non-single-crystalline substrates infeasible. Here, we report an epitaxy strategy for the wafer-scale growth of high-quality single-crystalline gallium nitride (GaN) on an amorphous silicon dioxide (SiO<sub>2</sub>) substrate. We achieve this result through a chemical bond transition, converting multilayer molybdenum disulfide (MoS<sub>2</sub>) to molybdenum nitride (MoN), which serves as a buffer layer to engineer a preferred orientation for the epitaxy of the overlying GaN film. Using this method, we also demonstrate the growth of an AlGaN/AlN/GaN heterostructure with high electron mobility exceeding 2000 square centimeters per volt per second. The resultant high-electron-mobility transistors exhibit subthreshold swing, on/off ratio, and threshold voltage comparable to those commercial devices.