Tailored sliding ferroelectricity for ultrahigh fatigue resistance in stacked trilayer MoS<sub>2</sub> crystals.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40737420.
- Also identified by DOI 10.1126/sciadv.adx8192 and PMC identifier 12309694.
- Licence recorded as CC BY-NC.
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Abstract
Fatigue-resistant ferroelectric materials in two-dimensional systems are crucial for next-generation electronic devices, but the relationship between stacking configurations and ferroelectric behavior remains underexplored. Here, we synthesize trilayer MoS<sub>2</sub> crystals with three noncentrosymmetric stacking configurations (AAA, AAB, and ABB) using a thermal gradient chemical vapor deposition strategy. Notable variations in room-temperature ferroelectricity are observed, with polarization strength following the order AAA > AAB > ABB, up to 0.110 microcoulombs per square centimeter. The total stress time for AAA, AAB, and ABB configurations is 10<sup>6</sup> seconds under a 10-microsecond pulse width. We also identify an oscillatory feature between stacking configurations and ferroelectric polarization in multilayer systems. This work establishes a distinctive paradigm for designing robust, high-performance ferroelectric materials, unlocking scalable solutions for next-generation memory and electronic applications.