<i>In Situ</i> Atomic-Scale Investigation of Electromigration Behavior in Cu-Cu Joints at High Current Density.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40739988.
- Also identified by DOI 10.1021/acsnano.5c07534 and PMC identifier 12392731.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Electromigration (EM) poses significant challenges to the reliability of miniaturized devices, particularly three-dimensional integrated circuits (3DICs) operating under high current densities. The EM phenomenon results from atomic-scale mechanisms involving momentum transfer between electron carriers and atoms. In this study, high-resolution transmission electron microscopy (HRTEM) was employed to investigate the atomic-scale behavior of EM in Cu-Cu joints. The analysis revealed that EM initially induced slip along various crystallographic planes, which gradually evolved into a stable slip along specific orientations, dominating the failure. This anisotropic atomic transport led to progressive degradation at the Cu-Cu bonding interface, including void formation and microstructural evolution. This interface depletion has been identified as a critical factor influencing the reliability of 3DIC packaging. Results emphasized the need for optimizing interconnect and interface properties to mitigate EM-induced failures, which is relevant to the development of high-power semiconductor technologies.