Quantitative Probing of Polarization-Driven Carrier Density Reconfiguration in FeFETs.
basic_science · Level V
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- Record sourced from PubMed, PMID 40747616.
- Also identified by DOI 10.1021/acs.nanolett.5c02917.
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Abstract
Quantitative understanding of polarization-induced carrier modulation at the nanoscale is crucial for optimizing ferroelectric field-effect transistors (FeFETs). Here, we integrate scanning microwave impedance microscopy (sMIM), piezoresponse force microscopy (PFM), and numerical modeling to quantitatively map ferroelectric domains and carrier distributions in MoS<sub>2</sub>/PZT-based FeFETs. We observe that polarization switching induces a two-order-of-magnitude change in carrier density (10<sup>11</sup> to 10<sup>13</sup> cm<sup>-2</sup>), which strongly influences the device's on/off behavior. Numerical reconstruction further reveals spatially heterogeneous carrier modulation governed by ferroelectric switching. This methodology provides a robust platform for probing polarization-carrier interactions in nanoscale, beneficial to future FeFETs optimization.