Tunable Spin-Orbit Splitting in Bilayer Graphene/WSe<sub>2</sub> Quantum Devices.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40773376.
- Also identified by DOI 10.1021/acs.nanolett.5c02309 and PMC identifier 12371879.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies, such as quantum computing and spintronics. However, their intrinsically weak spin-orbit coupling (SOC) complicates spin and valley manipulation. Integrating BLG with transition metal dichalcogenides (TMDs) enhances the SOC via proximity effects. While this enhancement has been demonstrated in 2D-layered structures, 1D and 0D nanostructures in BLG/TMD remain unrealized, with open questions regarding SOC strength and tunability. Here, we investigate quantum point contacts and quantum dots in two BLG/WSe<sub>2</sub> heterostructures with different stacking orders. Across multiple devices, we reproducibly demonstrate spin-orbit splitting up to 1.5 meV─more than 1 order of magnitude higher than in pristine BLG. Furthermore, we show that the induced SOC can be tuned in situ from its maximum value to near-complete suppression via the perpendicular electric field. This enhancement and in situ tunability establish the SOC as a control mechanism for dynamic spin and valley manipulation.