Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices.
basic_science · Level V
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- Record sourced from PubMed, PMID 40774654.
- Also identified by DOI 10.1021/acs.nanolett.5c01992 and PMC identifier 12371877.
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Abstract
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising candidates for neuromorphic electronic devices. This work addresses the coexistence of volatile and nonvolatile resistive switching in lateral memristors based on molybdenum disulfide with silver as the active electrode. The fabricated devices exhibited switching voltages of ∼0.16 V and ∼0.52 V for volatile and nonvolatile operation, respectively, under direct-current measurements. They also displayed the essential synaptic functions of paired-pulse facilitation and short- and long-term plasticity under pulse stimulation. The operation mechanism was investigated by <i>in situ</i> transmission electron microscopy, which showed lateral migration of silver ions along the molybdenum disulfide between electrodes. Based on the experimental data, a macroscopic semiclassical electron transport model was used to reproduce the current-voltage characteristics and support the proposed underlying switching mechanisms.