A single-phase epitaxially grown ferroelectric perovskite nitride.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40779620.
- Also identified by DOI 10.1126/sciadv.adu6698 and PMC identifier 12333682.
- Licence recorded as CC BY-NC.
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Abstract
The integration of ferroelectrics with semiconductors is crucial for developing functional devices, such as field-effect transistors, tunnel junctions, and nonvolatile memories. However, the synthesis of high-quality single-crystalline ferroelectric nitride perovskites has been limited, hindering a comprehensive understanding of their switching dynamics. Here we report the synthesis and characterizations of epitaxial single-phase ferroelectric cerium tantalum nitride (CeTaN<sub>3</sub>) on both oxides and semiconductors. The polar symmetry of CeTaN<sub>3</sub> was confirmed by observing the atomic displacement of central ions relative to the center of the TaN<sub>6</sub> octahedra, as well as through optical second harmonic generation. We observed switchable ferroelectric domains using piezoresponse force microscopy, complemented by the characterization of square-like polarization-electric field hysteresis loops. The remanent polarization of CeTaN<sub>3</sub> reaches approximately 20 microcoulomb per square centimeter at room temperature, consistent with theoretical calculations. This work establishes a vital link between ferroelectric nitride perovskites and their practical applications, paving the way for next-generation information and energy storage devices.