Observation of Boron Vacancy Concentration in Hexagonal Boron Nitride at Nanometer Scale.
basic_science · Level V
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- Record sourced from PubMed, PMID 40835580.
- Also identified by DOI 10.1021/acs.nanolett.5c02988 and PMC identifier 12412148.
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Abstract
Negatively charged boron vacancy (V<sub>B</sub><sup>-</sup>) ensembles in hexagonal boron nitride (h-BN) have attracted considerable attention as a promising platform for quantum sensing. Current challenges include the experimental validation of the spatial distribution and electronic states of optically active V<sub>B</sub><sup>-</sup> and optically inactive neutral boron vacancy (V<sub>B</sub><sup>0</sup>) defects. To address these issues, we employ electron energy loss spectroscopy (EELS) combined with scanning transmission electron microscopy (STEM) using monochromated 30-keV electrons, effectively reducing background interference. This approach unveils distinct spectral peaks at 2.5 and 1.9 eV, corresponding to V<sub>B</sub><sup>-</sup> and V<sub>B</sub><sup>0</sup> defects, respectively. Furthermore, we achieve nanometer-scale concentration mapping for V<sub>B</sub><sup>-</sup> and V<sub>B</sub><sup>0</sup> defects, advancing insights into spin defect configurations crucial for optimizing quantum sensor performance.