Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40838358.
- Also identified by DOI 10.1002/adma.202509088 and PMC identifier 12617061.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Proximity ferroelectricity, wherein polarization switching in one ferroelectric layer with a lower energy barrier can trigger switching in an adjacent ferroelectric with a higher energy barrier, has been demonstrated only in bilayers composed of structurally similar wurtzite-structured materials. This work demonstrates proximity-induced ferroelectric switching across a heterostructure composed of crystallographically and functionally dissimilar materials, wurtzite-structured AlScN and fluorite-structured HfZrO<sub>2</sub>. The AlScN/HfZrO<sub>2</sub> and AlN/HfZrO<sub>2</sub> bilayers exhibit cooperative switching dynamics despite their contrasting symmetry and polarization behaviors. This interfacial coupling produces a unique ferroelectric response, characterized by low remanent polarization and a high coercive field. Using the AlN/HfZrO<sub>2</sub> bilayer, a ferroelectric field-effect transistor is fabricated on a p-type Si substrate with phosphorus-doped source and drain regions. The device shows a wide memory window with excellent retention and endurance. These results establish a versatile materials design strategy for engineering ferroelectricity via structural and functional heterogeneity.