Dual-Functional GeSe-Se Coselenization Enabling Synergistic Defect-Interface Engineering for High-Efficiency Electrodeposited Flexible CZTSe Solar Cells.
basic_science · Level V
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- Record sourced from PubMed, PMID 40847956.
- Also identified by DOI 10.1021/acs.nanolett.5c02739.
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Abstract
Flexible Cu<sub>2</sub>ZnSnSe<sub>4</sub> (CZTSe) solar cells hold great potential for low-cost green fabrication and portable applications, yet electrodeposited devices suffer from low efficiency (∼6% vs 12.84% for solution-processed ones), primarily due to defect-induced nonradiative recombination and carrier loss at back interfaces. Herein, a dual-functional GeSe-Se coselenization strategy is proposed to simultaneously achieve defect regulation and back-interface engineering. Ge substitution for Sn during selenization induces lattice contraction, effectively suppressing Sn-related deep defects and band-tail states while minimizing the secondary phase. Simultaneously, Ge diffuses into the MoSe<sub>2</sub> interface layer to optimize the energy-level alignment and reduce nonradiative recombination. Consequently, the optimized flexible CZTSe solar cells achieve a record efficiency of 9.01%, the highest among electrodeposited flexible CZTSe devices. This study elucidates the synergistic role of Ge in simultaneously mitigating bulk defects and refining interfacial energetics, highlighting a remarkable achievement for electrodeposition-based flexible CZTSe solar cells.