Large-Area Monolayer p-Type Semiconductor Films Toward High-Performance Electrical Device Arrays.
basic_science · Level V
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- Record sourced from PubMed, PMID 40878424.
- Also identified by DOI 10.1002/adma.202500886.
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Abstract
2D semiconductors open new avenues in the post-Moore era for semiconductor technologies immune from the short-channel effect due to their atomic-scale thicknesses and dangling-bond-free surfaces. However, it still remains a big challenge to obtain large-area and high-quality monolayer p-type semiconductors so far. Herein, a controlled nucleation is realized by tuning the evaporation areas of Se precursors during the p-type WSe<sub>2</sub> growth. By optimizing the nucleation density, centimeter-scale uniform monolayer WSe<sub>2</sub> and Nb-incorporated WSe<sub>2</sub> films are synthesized. The field effect transistor array based on WSe<sub>2</sub> film exhibits p-type behavior with hole mobilities of 34 ± 17 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and an average on/off ratio of 4 × 10<sup>7</sup>, which can be further improved by Nb incorporation with much higher hole mobility of 48 ± 16 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> with an average on/off ratio of ≈10<sup>8</sup>. The work paves the way for synthesizing large-scale uniform 2D p-type semiconductors for electrical devices and integrated circuits.