High-Performance Air-Stable Polymer Monolayer Transistors for Monolithic 3D CMOS logics.

Abstract

The monolayer transistor, where the semiconductor layer is a single molecular layer, offers an ideal platform for exploring transport mechanisms both theoretically and experimentally by eliminating the influence of spatially correlated microstructure. However, the structure-property relations in polymer monolayers remain poorly understood, leading to low transistor performance to date. Herein, a self-confinement effect is demonstrated in the polymer monolayer with nanofibrillar microstructures and edge-on orientation, as characterized by the 4D scanning confocal electron diffraction method. The polymer chains align parallel to the nanofiber long axis, while the π-stacking direction aligns perpendicular to this axis. To reduce the trap density at the semiconductor/dielectric interface, a top-gate configuration is employed with CYTOP as gate dielectric, and the resulting monolayer transistors achieve a field-effect mobility of 7.12 cm² V^-1 s^-1, an on/off ratio of 10⁸, and a subthreshold swing of 0.21 V dec^-1, among the performance records for polymer monolayer transistors. Notably, the top-gate architecture allows self-encapsulation, and the monolayer network induces the morphologic lock effect, contributing to a remarkable device stability over 1260 days. Additionally, the low thermal budget of this polymer monolayer transistor enables the monolithic 3D integration with n-type oxide transistor, resulting in hybrid complementary inverters with reasonable voltage amplification capabilities.